Improving Short-Circuit Withstand Capability by Targeted Optimization Package for Press-Pack IGBT Module

In this article, an electrical–thermal–mechanical (ETM) multiphysics transient finite-element (FE) model is proposed for the press-pack insulated gate bipolar transistor (PP-IGBT) module, and a targeted optimization package (TOP) is designed to enhance the short-circuit withstand capability (SCWC). First, an ETM transient FE model is proposed based on a 3.3-kV/ 50-A PP-IGBT and the coupling relation among electrical, thermal, and mechanical. The weak part of the SCWC is identified by combining the test with the simulation of the short-circuit transient process. Second, the pattern and dimension parameters of TOP are investigated to realize the best performance. Then, its SCWC improvement and reliability are verified through the SCWC, blocking voltage, and power cycling test. The SCWC of the TOP PP-IGBT has increased by over 100% compared to that of the conventional PP-IGBT.