A Novel Double-Sided Cooling Silicon Carbide Power Module With Ultralow Parasitic Inductance Based on an Interleaved Power Loop

Higher switching speed requires power module package to have lower parasitic inductance. This article summarized three methods to realize low parasitic inductance. Based on these methods, this article proposed a novel double-sided cooling power module structure, which places the spacer under the bare die and utilizes the copper clips to realize the electrical connection between different copper layers. The proposed structure realized an interleaved power loop by utilizing copper clips and split dc terminals. Compared to the double-loop double-sided cooling power module structure, the parasitic inductance of the proposed structure can be decreased by more than 50% and that is only 1.3 nH. Besides, the dynamic current sharing properties and thermal performance of the proposed structure are also analyzed. Based on the proposed module, a module with three SiC
mosfet
s in parallel is designed, fabricated, and tested to verify its low parasitic inductance performance. The proposed power module will contribute to achieving high power density applications.