Robust 1/f Noise Unaffected by Program/Erase Cycling-Induced Damage in Ferroelectric Schottky Barrier FETs

This study investigates the 1/f noise characteristics of Schottky barrier (SB) ferroelectric field-effect transistors (FeFETs) and their response to program/erase (P/E) cycling-induced damage. The robustness of SB FeFETs to this damage is demonstrated, with the 1/f noise remaining unaffected even after the complete collapse of the memory window. The origin of this robustness is attributed to the separation of 1/f noise source (SB contact) and the region where P/E cycling-induced damage occurs (ferroelectric-dielectric interface).