Fabrication and Characterization of Kilovolt p-Type SiC JBS Diodes With Enhanced Current Capability and Electroluminescence Phenomenon

Junction Barrier Schottky (JBS) Diodes are fabricated for the first time on p-type Silicon Carbide (SiC) substrates with the avalanche breakdown voltage (BV) of 1200 V. The SiC p+ substrates are grown by the top seeded solution growth (TSSG) method, with the average resistivity of 50 m
$\Omega \cdot $
cm and the hole carrier concentration above
${1}\times {10} ^{{20}}$
cm-3. The conductivity modulation is investigated based on the p-type SiC epitaxy, exhibiting enhanced current capability at elevated temperatures. This study demonstrates the application of p-type SiC substrates in power devices through kilovolt JBS diodes and paves the way towards ultra-high-voltage/current applications of bipolar SiC transistors. Remarkably, we observe an obvious electroluminescence (EL) of the p-type SiC JBS diodes. The luminescence intensity under the carrier recombination mechanism between the conduction band and the Al acceptor energy level has an obvious linear relationship with the conduction current. This finding serves as compelling evidence of the potential of p-type SiC materials in a wide range of applications.