Low Noise GaN/AlxGa1-xN on SiC vertical p-n diodes for improved optoelectronic performance

This paper introduces the hetero-epitaxial development of GaN/AlGaN diodes shows significant betterment in noise and optoelectronic performances. This new class of hybrid Avalanche Photo Diode (hAPD) offers advantages owing to better thermal conductivity, lattice matching and electrical conductivity. Quantum-Corrected Drift Diffusion (Q-CDD) study shows the superiority of hAPDs in terms of enhanced Quantum Efficiency (92%), Photo Responsivity (77%) and low dark current. To the best of the authors' knowledge, it is the first report on hybrid APD with GaN/Al0.56 Ga0.44 N/SiC for application as low noise Single Photon Detector in UV region.