Design of 200W Double Biased GaN Power Amplifier Based on X Parameter

The paper proposes a circuit design simulation method based on X-parameters. To address the challenge of conducting harmonic simulations in ADS for self-developed devices lacking models. This paper integrates a Load Pull experimental platform to establish an X-parameter extraction system. X-parameters can be encapsulated as a “black box” model and imported into ADS for RF signal simulation. This provides designers with a new solution for precisely optimizing parameters and greatly reduces the difficulty of later testing and debugging tasks. Base on X-parameters, the paper designs a high-power and high-efficiency dual-bias gallium nitride power amplifier. The final physical test data shows that at a center operating frequency of 2.1 GHz, the gain is 19.9 dB, drain efficiency is 71%, and saturation power is 53 dBm (200W). The test results are largely consistent with the simulation results using X-parameter models, confirming the accuracy and feasibility of the model. This design method exhibits significant engineering practicality.