Structural properties and Luminescence of PECVD-prepared β-Ga2O3⸳ZnO thin films

$\beta-\mathrm{Ga}_{2} \mathrm{O}_{3} \cdot \mathrm{ZnO}$ thin films (Zn content up to 8 at. $\%$) were prepared by Plasma-Enhanced Chemical Vapor Deposition (PECVD) under conditions of a low-temperature nonequilibrium plasma of inductively-coupled RF $(13.56 \mathrm{MHz})$ discharge at low pressure (0.01 Torr), while directly high-purity elements - Ga and Zn, as well as high-purity O
2
were used as the sources of macrocomponents. The chemical composition, surface morphology, as well as cathode luminescence spectra and phase composition were studied. The luminescence and the phase composition were studied after annealing process in the atmosphere of argon at $400^{\circ} \mathrm{C}$.