Impact of LCAO-DFT analysed Si-HfO2 on GSNCFET with its Digital Application

This work investigated the impact of silicon (Si) doping on the properties of hafnium oxide (HfO
2
) and how the combination of this Si-doped HfO
2
and high-k dielectric material affects the parameters of conventional Negative Capacitance Field Effect Transistor (NCFET). The modified architecture of NCFET with gate stacking (GS) of LCAO-DFT analyzed Si-HfO
2
with the high-k dielectric assisted substrate is discussed with the variation of different terms along the device’s channel. The contour behaviour of GS-NCFET is discussed along the channel region. The net charge and total current is displayed in the work. The energy shift contour of GS-NCFETIN conduction and valence band is given. Proceeding with the basic parameters of GS-NCFET, the authors show the digital applications of GS-NCFET. With the use of a cadence simulator, the authors show the implementation of GS-NCFET in digital applications.