Ferroelectricity Engineered AlScN Thin Films Prepared by Hydrogen Included Reactive Sputtering for Analog Applications

Recently, various studies have been conducted to understand the material properties, ferroelectricity, and device applications of nitride ferroelectrics. In this research, we propose breakdown strength and ferroelectricity engineered AlScN thin films by utilizing reactive sputtering with H
2
gas inclusion. Higher breakdown field/coercive field (E
BD
/E
c
) ratio was demonstrated, indicating high endurance potential. Moreover, via changing the H
2
flux percentage, AlScN film exhibited linear-like dependence between remanent polarization (P
r
) and electric field (E), showing the possibility of multi-state operation on future analog devices.