I. Introduction
The resistive random-access memory (RRAM) has drawn great attention due to the simple structure, low power consumption and the potential of breaking Von Neumann architecture bottleneck [ 1 – 2 ] . However, RRAMs still suffer from poor uniformity and endurance characteristics, which poses a challenge for the applications [ 3 – 4 ] . Here, we propose a laser-mediated interface engineering (LMIE) method to promote the performances. The TiN/TaO x /TaN devices treated by the 0.4 J/cm 2 laser have a great uniformity with 10x improvement compared with pristine devices and excellent endurance characteristic of 10 6 with on/off ratio of 156. The mechanism is explored by characterization methods.