Electrical Characteristics of BEOL-Compatible Top-Gate In2O3 Transistors

In this work, high-performance top-gate indium oxide (In
2
O
3
) transistors with high-k dielectrics HfLaO were demonstrated. The top-gate In
2
O
3
transistor with HfLaO gate dielectric at a channel length (L
ch
) of 1 μm exhibits a high field-effect mobility of 40 cm
²
/V·s, a high current on/off ratio of ~10
¹⁰
and enhanced-mode operation. The electrical performance of top-gate indium oxide (In
2
O
3
) transistors with different L
ch
values from 2 μm to 0.2 μm was investigated systematically. This work provides technological opportunities for monolithic 3D integration.