Investigation of the Electromagnetic Properties of Silicon Carbide in the mmWave Frequency Range Using Density Functional Theory

This study uses density functional theory (DFT) to investigate the electromagnetic (EM) properties of silicon carbide (SiC). Focuses on developing a methodology bridging the gap between nanoscale and continuum modeling. Using the SIESTA program, the crystal structure of SiC is modeled. In the simulations, the influence of the electric field in two directions was checked, revealing the anisotropic behavior of the material. From the real and imaginary permittivity, the loss angle in SiC up to 450 THz was calculated with the smallest value for $\mathbf{72.5 ~ GHz}$. Conductivity was also obtained for this particular frequency.