Bilayer Mos2 Based Memristive Crossbar Array for Neuromorphic Applications

Memristors offer considerable potential to further biological synapse modeling and are frequently utilized to simulate biological synapses due to their typical neuron-synapse-like metal-insulator-metal (MIM) sandwich structure. However, the memristor's poor stability and high switching voltage limit its wider application to the biological synapse mimicking. High-density and highly efficient neuromorphic computing capabilities is required for the realization of multi-functional neuromorphic computing integrated with 3D RRAM technology. Therefore, in this study, we have successfully fabricated a bilayer MoS
2
-based Memristive Crossbar Array (MCA) using Au/MoS
2
/Au configuration. This work not only exhibits non-volatile bipolar resistive switching characteristics with an impressive endurance of 240 cycles and a remarkable retention time of up to 3×10
⁴
seconds, but also showed excellent operational uniformity with a coefficient of variation limited to 4.57 % and 2.52 % for RESET and SET voltages, respectively.