Research and Design of GaN Based ClassΦ2 Very High Frequency Resonant Converter

Increasing the switching frequency of power converter is the most direct way to increase the power density, but the switching loss of traditional power converter in high-frequency applications is too large, which can not meet the high frequency demand. The Very High Frequency (VHF) resonant converter can achieve soft switching and greatly reduce switching losses. Gallium nitride (GaN) devices have low on-loss, fast switching speed and high upper frequency limit, which can further improve the efficiency and power density of the converter. Therefore, the VHF resonant converter with GaN device as the basic switching element has become a research hotspot in the field of power supply. In this paper, the research and design of Class Φ2 VHF resonant flyback converter based on GaN devices are carried out, and the key technical issues such as the converter parameter design method, magnetic element optimization and controller improvement are studied. The prototype of Class Φ2 VHF resonant converter with 10MHz and 10W is built. At rated power, the Class Φ2 prototype has an efficiency of 77.4%.