Simulation and Experimental Research of Plasma Generator for Dual RF-ICP-Enhanced CVD System

The double radio frequency inductively coupled plasma-enhanced chemical vapor deposition (Dual RF-ICP-enhanced CVD) is a crucial technique for preparing diamond, the ultimate semiconductor. However, precisely controlling the parameters of the plasma generator is difficult and significantly impacts the quality of the diamond output. In this study, a numerical simulation strategy based on the finite element method was used to obtain numerical cloud maps of the magnetic, flow, temperature, and plasma fields in the plasma generator for the Dual RF-ICP-enhanced CVD system. The experimental results of plasma diagnostics based on emission spectroscopy matched the simulations. Furthermore, the influence of precursor gas flow on the multi-physical fields was investigated.