An Innovative and Efficient Unified Analysis Model for AlGaN/GaN HEMTs

A brand new and fast running compact I-V model for AlGaN/GaN high electron mobility transistors (HEMTs) have been presented, which is based on simple expressions of surface potential. The elimination of redundant terms in the model's derivation and the inclusion of only elementary functions in the final model enhance its efficiency. Based on the surface potential, a drain current compact model is analytically derived.