Recent Progress of AlGaN/GaN HEMTs QPZD Model

This paper summarizes the recent advances in compact modeling techniques based on the Quasi-Physical Zone Division (QPZD) theory mainly for AlGaN/GaN HEMTs. Firstly, the modeling principle of QPZD and the corresponding core model is introduced. A comprehensive comparison between the QPZD model and other well-known compact models is also presented. For high-power design applications, the modeling techniques of dispersion effects including self-heating effects, ambient temperature effects, and trapping effects are well developed. Furthermore, several efforts have been devoted to the extension of QPZD model capability. Details of the microwave noise model, switch model, and process fluctuation model are introduced, respectively. Owing to these efforts, the developed QPZD modeling techniques can contribute to the comprehensive and accurate designs of significant chips in RF front-ends.