Influence of Fabrication Modes on Magnetron-Sputtered ZrO2-Based Memristors’ Properties

Electric properties of thin films are depended on its structure. The more uniform structure of thin film, the more uniform distribution has electric field across it. This work determines the optimal mode of magnetron sputtering for zirconium dioxide films deposition. The optimal mode is destined by analyzing the morphology of zirconia thin films and its influence on current-voltage characteristics of memristors fabricated on the basis of these films. Morphology of thin films showed the local minimum of average roughness that contributes to medium sputtering mode. A maximum limiting resistance ratio is observed in the current-voltage characteristic in a memristor with active layer obtained under optima sputtering conditions with a minimum surface roughness. This result points to tendency of improvement of electric characteristics of memristor with improvement of its active layer roughness. The results of the work can be used in developing the industrial technology of magnetron sputtering of thin films of metal oxides for solid-state memristors.