Characterization of Structural and Dielectric Properties of Silicon Nitride Thin Films Deposited by PECVD

The structural and electrical properties of silicon nitride (SiN
x
) are influenced by its composition ratio, x. In this study, we examine the characteristics of SiN
x
films, deposited by plasma-enhanced chemical vapor deposition (PECVD), using X-ray photoelectron spectroscopy (XPS), electron microprobe microscopy (EMP), ellipsometry, and high-voltage broadband dielectric spectroscopy (HVBDS). The film composition ranged from N-rich to Si-rich. The dependence of refractive index, permittivity, loss factor and AC conductivity on the SiN
x
ratio is presented and discussed.