Research and Optimization of Key Preparation Process Parameters of Magnetic Sensitive Components

With the development of magnetic sensors, current sensors based on magnetoresistive effect are expected to become effective tools to support the development of smart grids in the future because of their comprehensive advantages such as small size, high sensitivity, high precision, wide measurement range, high integration, and low cost. In order to meet the application requirements of different scenarios, the process of magnetically sensitive components in the preparation process will be different, this paper aims at the preparation of thin films with magnetic layer and barrier layer of magnetic tunnel junction, and tests and analyzes the influence of key parameters such as vacuum, air pressure, temperature, power, annealing conditions and other key parameters on the TMR ratio and magnetoelectric response of magnetoresistance unit in the preparation process. Main parameters of TMR and magnetron sputtering, and dependence of vacuum annealing conditions lays the foundation for obtaining a high TMR ratio and realizing the high-sensitivity magnetic sensor required for power application scenarios.