Ultra Low-Cost Epi-Gd2O3 MOSFET Based Novel 1T Frequency Detector

Edge devices are leading cause for exploding research on developing cost-effective device fabrication techniques [1] . High dielectric constant ( k ) oxides have been significantly explored in the literature for continued scaling trend by reducing gate leakage [2] . The high- κ oxide-based MOS capacitors (MOSCAPs) show a peculiar shift in the capacitance vs gate voltage (C-V) characteristics with varying frequency [3] . In our previous work, we showed an epitaxial Gd 2 O 3 growth on Si (111) substrate via RF sputtering enabling low-cost SOI [4] . There is a significant interlayer formation consisting of Gd 2 O 3 and SiO 2 composite. As these oxides form defective interface, thereby creating traps leading to a parallel shift in the C-V with frequency. In this work, the spatio-temporal properties of the traps in Si/Gd 2 O 3 interlayer in Gd 2 O 3 MOSCAP are exploited to propose a novel 1T-based frequency detector. The traps’ response varies with the frequency of the signal and causes V T shift producing a one-to-one relation. This effect is modelled as interface traps distributed over the bandgap and having distributed capture cross-section [5] .