Compact Modeling of Compound Semiconductor Memory ULTRARAM: A Universal Memory Device

Achieving a universal memory capable of delivering non-volatility with high speed and energy-efficient operation has been the primary motivation in memory research. ULTRARAM is an emerging compound semiconductor-based nonvolatile memory that exhibits degradation-free high endurance (>10
⁷
P/E cycles), retention (>1000 years), and ultralow switching energy per unit area (1000 times lower than flash). This paper presents a SPICE model of the ULTRARAM memory device for circuit simulations. The model includes the capture and release of the charges in the floating gate of the device utilizing TBRT physics and has been validated with experimental data.