Integrated 5-W GaN Doherty Power Amplifier for 5G FR1 Bands with 19 dB Gain Over a 41% Bandwidth

This paper presents the design of a Doherty power amplifier for 5G applications in the FR1 5G bands, implemented with WIN's 150 nm GaN/SiC HEMT technology. The design aims to achieve real-case scenario performance for power and gain while covering the full N77 & N79 bands, which corresponds to a 41 % bandwidth. This is accomplished by developing a two-stage design with an optimized combiner architecture. The fabricated chip achieves 37 dBm of saturated output power, 19 dB of linear gain and a minimum PAE of 20% over a 6dB back-off range in the 3.3 GHz-5 GHz band, achieving state-of-the-art performance for a multi-stage Doherty architecture.