Enhancing Radio Frequency Performance of InGaAs-SOI-FinFET Through Optimized Channel Doping Density

In this work, we investigate the impact of channel doping density variation on the radio frequency (RF) performance of Indium Gallium Arsenide (InGaAs) SOI-FinFETs. The FinFET architecture offers unique advantages for RF applications due to its superior electrostatic control and reduced short-channel effects. By modulating the doping density in the channel region, we aim to optimize device performance for RF applications. Through extensive simulations, we demonstrate significant improvements in key RF metrics such as cutoff frequency
$(f_{\mathrm{T}})$
, transconductance frequency product (TFP), maximum oscillation frequency
$(f_{\mathrm{M}\mathrm{A}\mathrm{X}})$
, gain transconductance frequency product (GTFP) and gain frequency product (GFP). Thus, emerging trends and challenges in leveraging InGaAs-SOI-FinFET for RF applications, include considerations for circuit design, process integration, and reliability. Our findings also reveal the critical role of channel doping density in achieving enhanced RF performance in InGaAs-SOI-FinFETs, offering valuable insights for the design and optimization of future high-frequency electronic devices..