Closed-Loop Gate-Sensing Active Driver IC with Adaptive Delay Compensation Technique for Silicon Carbide Power MOSFETs

To permit an optimal tradeoff between current overshoot and switching losses (E
Loss
) during the switching on of Silicon Carbide power MOSFETs (SiC), an active gate driver (AGD) IC is proposed in this paper. This AGD IC incorporates a gate-sensing technique without the requirement of external sensing components and adjusts the driving capability during turn-on, thereby suppressing current overshoot, oscillation, and electromagnetic interference (EMI) issues. Additionally, the proposed driver IC compensates for circuit propagation delay to enhance effectiveness in suppressing current-induced EMI. The proposed AGD is validated by the 0.18 μm HV BCD process. It achieves a remarkable 40.5% reduction in switching loss compared to the conventional gate driver (CGD) under similar current overshoot conditions. These results underscore the significant advancements the AGD offers in enhancing the efficiency and reliability of SiC-based power management systems.