600 V 4H-SiC Lateral Bi-Directional JBS Diode Integrated MOSFET (L-BiD-JBSFET)

This paper presents the successful demonstration of a 600 V 4H-SiC lateral bi-directional JBS diode integrated MOSFET (L-BiD-JBSFET). The unit cell of the L-BiD-JBSFET is constructed by connecting two SiC lateral JBSFET unit cells back-to-back with a common-drain configuration. To explore the electrical characteristics of the SiC L-BiD-JBSFET, we begin by implementing and characterizing SiC lateral JBS diodes, SiC lateral MOSFETs, and SiC lateral JBSFET devices. Building on these findings, the unique features of SiC L-BiD-JBSFET are investigated, supported by simulation data. The fabricated L-BiD-JBSFET exhibits symmetric conduction and blocking characteristics, with improved conduction behavior attributed to Schottky embedding.