Enhanced Electrical Modelling of Spin Transfer Torque Magnetic Tunnel Junctions with Temperature Dependent Magnetic Parameters

A magnetic tunnel junction, or an MTJ, is a spintronic device of nanoscale dimensions. It is a magneto-electric device that can hold two definite resistance states according to its magnetization states. MTJs can be used as memory elements due to their non-volatile nature. They can be fabricated into chips using VLSI techniques. The main applications of MTJs include computer memory, logic, and neuromorphic computing. This work focuses on the modelling of Spin Transfer Torque and Voltage-Controlled Magnetic Anisotropy Magnetic Tunnel Junctions (STT-VCMA MTJs) using a SPICE-based simulation approach. The study incorporates thermal effects, such as temperature-dependent variations in key parameters like saturation magnetization, spin polarization, uniaxial anisotropy, and VCMA coefficient. Simulations reveal the impact of these temperature-dependent parameters on the switching behavior of MTJs. The results demonstrate that incorporating thermal effects is crucial for accurately capturing the dynamic behavior of MTJs, shedding light on the temperature-sensitive aspects of their operation. This work contributes to the understanding and development of robust SPICE models for STT-VCMA MTJs, facilitating their integration into larger electronic systems and supporting the exploration of novel memory technologies.