Investigating Electrical Properties and Temperature Sensing Capabilities of Ti /4H-SiC Schottky Barrier Diodes

The current-voltage (I-V) characteristics of Al/Ti/4H-SiC Schottky Barrier Diodes (SBDs) were analyzed through simulations using the Atlas-Silvaco software package over a temperature range of 85–443 K. The results from the simulations showed a strong alignment with experimental data. A detailed analysis of key electrical parameters, such as the barrier height and ideality factor, demonstrated their significant temperature sensitivity. In our final analysis, we evaluated the effectiveness of temperature sensors constructed from Al/Ti/4H-SiC Schottky diodes across a comprehensive range of bias currents, from 10 μA to 1.2 mA, and temperatures, from 85K to 443K. The simulation outcomes indicated that at a bias current of 76.7 μA, the forward voltage of the diode demonstrated a strong linear relationship with temperature, achieving a coefficient of determination (R2) of 0.9999. This was accompanied by a sensitivity of 1.7 mV/K and a minimal temperature deviation of 14K, underscoring the device's high performance as a temperature sensor in a broad operational spectrum.