p-n Homojunction Based Perovskite Solar Cell with Double Hole Transport Layer for Improved Efficiency

Perovskite solar cell technology is one among the most successful third generation solar cell technology owing to its high power conversion efficiency and low manufacturing costs. Researchers are trying to further improve its efficiency by making modifications in its structure and material composition. In this paper, modifications are made on the structure of the device and an analysis of its performance parameters are carried out. Two modifications, namely, introduction of a p-n homojunction absorber region in place of the intrinsic light absorbing region and inclusion of a double hole transport layer are made on the same. The introduction of a p-n homojunction absorber increases the number of generated carriers and replacing the single hole transport layer with a double hole transport layer improves the carrier separation, thereby, increasing the power conversion efficiency.