Reliability under High Gate-Voltage Condition on SiC MOSFET Through Repeated Overcurrent

The increasing use of SiC power devices is significantly contributing to the efficiency of power electronic circuits. It is known that setting a higher gate voltage on MOSFETs can further reduce losses in power devices. However, a higher gate voltage also leads to an increase in saturation and short-circuit currents, which can significantly compromise the long-term reliability of the devices due to the degradation of the gate oxide in the MOSFET. This paper focuses on the impact of gate voltage in the context of simultaneously achieving loss reduction and reliability in SiC MOSFETs. The purpose of this paper is to clarify the relationship between gate voltage, losses, and reliability aspects of SiC power devices through experimental analysis. The results of this research will contribute to the optimal design of gate drive circuits for SiC MOSFETs, ensuring a balance between efficiency and long-term reliability in power electronic applications.