Analysis of Super Junction RC-IGBT and Novel Snapback-free Partial Schottky Collector SJ-RC-IGBT

To eliminate the snapback effect of conventional RC-IGBT and reduce the power loss during the turn-off transient of IGBTs, a novel Schottky contact in Collector side Super junction RC-IGBT (PSC-SJ-RC-IGBT) is proposed. With the application of the Schottky diode and the super junction structure in the RC-IGBT, the turn-off speed is accelerated and the tail current is significantly reduced, as a result, the turn-off loss of the new structure is 54.1% lower than that of the Con-SJ-RC-IGBT. Furthermore, due to the Schottky junction on the collector side and the super junction in the drift region, the MOS structure will not turn on at the beginning of the switch-on progress, the SC-SJ-RC-IGBT turns on and directly works in IGBT mode, eliminating the snapback effect.