Comparative Study on 45nm, 90nm and 180nm 6T SRAM Technologies

This research presents a meticulous comparative analysis of Static Random-Access Memory (SRAM) cells, the design is carried out at 45nm, 90nm, and 180nm semiconductor technologies. As the semiconductor industry advances, the imperative to comprehend the intricate relationship between technology scaling and SRAM performance intensifies. Our study meticulously quantifies the nuanced impact of varying transistor sizes, gate lengths, and leakage currents on key performance metrics. The results gleaned not only contribute to the current understanding of SRAM design but also lay a crucial foundation for future endeavors in memory subsystem design, ensuring a more informed approach to semiconductor integration.