Analyzing Ga-Polar and N-Polar GaN HEMTs: A Comparative Study for High-Power DC Performance in Semiconductor Applications

The performance of Ga-Polar and N-Polar Gallium Nitride High-Electron-Mobility Transistors (HEMTs) in high-power direct current (DC) applications in the industry of semiconductor is examined in a detailed comparison. Compared to Ga-polar HEMTs, N-polar HEMTs achieve a significantly higher maximum drain current, with a measurement of 1210 mA/mm as opposed to 814 mA/mm for Ga-polar HEMTs. Due to this substantial disparity, N-polar HEMTs are better suited to applications requiring high power output because they are capable of handling larger currents. Furthermore, the N-polar HEMT exhibits superior maximum transconductance, as measured at 332 mS/mm versus 282 mS/mm for the Ga-polar HEMT. N-polar HEMTs perform better in signal amplification applications because of their transconductance, which measures their ability to convert variations in gate voltages to changes in drain currents. As a result, N-polar GaN/AlGaN/GaN HEMTs emerge as more promising options for applications that prioritize high power output or efficient signal amplification, such as power amplifiers used in radar systems or base stations, high-frequency switches used in communication systems, and linear voltage regulators due to their adept control over current flow.