Parameter Extraction for Large Periphery Indigenous AlGaN/GaN HEMT Device

In this paper, the method for extracting equivalent circuit parameters for small-signal operation and the modified Angelov model parameters used for the I-V model of a 0.25 µm indigenous large periphery (10 × 175 µm) GaN HEMT device has been described. The small-signal parameter extraction methodology is based on passive pinch-off S-parameter measurement which is used for getting the starting values of extrinsic elements and then optimizes them to minimize the objective function. For the DC I-V model, curve fitting of the measured I-V data was used for the extraction of model parameters. The accuracy of model was verified by S-parameter matching and I-V matching between the model and the measured data.