Variability in Switching Characteristics of RRAM Based 1T-1R Configuration and Memory Array

Resistive Random Access Memory (RRAM) is a promising memory device for in-memory computing applications. The variability issues due to random filament formation and rupture, filament length and position variations degrade the performance of RRAM devices. In this paper, variability analysis on the RRAM Stanford model is performed by varying certain parameters of the model and the switching characteristics are analyzed. RRAM Stanford model is an existing physics-based compact model of RRAM which includes the device-to-device and cycle-to-cycle variations for circuit simulations. The parameters of the model correspond to various factors like SET-RESET voltage, current levels, HRS/LRS slope, etc. The RRAM Stanford model in 1T-1R configuration is simulated in the Cadence circuit simulator in which the effects of variations on the switching characteristics are analyzed. The
$3\mathrm{x}3$
RRAM memory array is implemented using 1T-1R configuration and the effects of parameter variations are analyzed.