Abstract:
In this paper, a two-stage cascaded broadband low-temperature and low-noise amplifier is designed based on the enhanced pseudo-electron mobility transistor (E-pHEMT) ATF5...Show MoreMetadata
Abstract:
In this paper, a two-stage cascaded broadband low-temperature and low-noise amplifier is designed based on the enhanced pseudo-electron mobility transistor (E-pHEMT) ATF54143 with an operating frequency range from 4 GHz to 6 GHz. The π-type matching, T-type matching and parallel resistor negative feedback are adopted to achieve a broadband matching with a bandwidth of 2 GHz. The final simulation results show that the gain is 25.8±3.65 dB at a low temperature of 20 K, the noise figure is 0.1015±0.0145, and the input and output reflection coefficients are below -10 dB in the frequency band of 4 GHz to 6 GHz, with a stability factor of >1.4, which achieves stable operation within this frequency band.
Date of Conference: 15-17 April 2024
Date Added to IEEE Xplore: 21 June 2024
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