900 MHz RF Power Rectifier Based on Ultra-low Turn-on Voltage Quasi-vertical GaN Schottky Diode

This paper presents a 20 W high-power RF-to-DC rectifier that can be applied to wireless power transfer (WPT) systems. To address the power limitations of conventional diodes, a rectifier is designed based on a gallium nitride (GaN) integrated circuit (IC) quasi-vertical Schottky barrier diode (SBD). Leveraging the advantages of high mobility, wide bandgap, and saturation velocity of the GaN, significant benefits of the diode have been derived, with an ultra-low turn-on voltage of 0.23 ± 0.005 V (at 1 A/cm
²
) and a high breakdown voltage of 180 V, to improve the rectification performance. Using this diode, a high-power rectifier with a wide input power range and high efficiency is developed. The proposed rectifier structure consists of a single-shunt self-developed diode and a topology with class-F harmonics control networks. It achieves a peak power conversion efficiency of 72.9% with an input power of 43 dBm at 900 MHz.