Ultra-low Capacitance Bidirectional SCR Device Design

Data interfaces are widely used and transmission rates are increasing, which puts higher demands on the interface Electro Static Discharge (ESD) protection. In this paper, a TVS device with Ultra-Low-Capacitance DDSCR (ULCDDSCR) structure is proposed. The structure is based on a Dual Direction SCR (DDSCR) structure design, which reduces the barrier capacitance formed by the injected trap while preventing leakage from occurring in the device by increasing the injection of the N-type trap region once. Suitable process and structural parameters are obtained through simulation analysis.