Monte Carlo Simulation Analysis for Irradiation Damage by Cobalt Ion in Cadmium Selinde Group II-VI Semiconductor

The existence of semiconductor devices in space or high energy enviorment makes them vulnerable to a wide range of effects brought on by high-energy radiation. These effects can result in Single Event Upsets (SEU), Total Ionizing Dose (TID) and Displacement Damage (DD) which can cause the device’s lattice structure to be damaged or altered. The effects of energy level exposure on semiconductor devices have been the subject of a remarkably limited amount of research. Cadmium selenide, often known as CdSe, is a semiconductor that belongs to the binary II-VI group. It has a bandgap that is straight and measures approximately 1.7 eV. This is because it has an acceptable bandgap, great stability, and low production costs.The simulated sample used in this study is CdSe, which has a density of 5.82 gm/cm
³
. The radiation damage was simulated by using cascade simulation to study the impact of elastic and inelastic scattering caused by Cobalt-60 (60Co) ions. This was done using the Stopping and Range of Ions in Matter (SRIM-TRIM) simulation.According to the simulation results, when exposed to particle radiation with an energy of 500 keV, the stopping range was determined to be approximately 2767 nm. At a higher energy level of 1 MeV, the stopping range was found to be around 5782 nm. When the electric field strength is 100 keV, 500 keV, and 1000 keV, the total ionization is 27.9 keV/Ion, 217.8 keV/Ion, and 527.4 keV/Ion, respectively, at an ion angle trajectory of 90
^o
. This paper focuses on the roles of displacement damage, vacancies and the response of the device to ion collision cascade at different irradiation levels.