30GHz Band Double Voltage Rectifier MMIC with the 0.1 μm E-pHEMT Gated Anode Diode

In this paper, the 30 GHz band double voltage rectifier MMIC with the 0.1 μm E-pHEMT gated anode diode (GAD) is demonstrated for the millimeter wave wireless power transfer (WPT) systems. The GAD is configured with the 0.1 μm E-pHEMT with the connected gate-drain electrodes as the anode terminate and the source electrode as the cathode terminal. The GAD has the measured cutoff frequency of 808 GHz that is enough high for millimeter wave rectification. The gate width of the E-pHEMT is optimized for improvement of the rectification efficiency. The developed rectifier MMIC achieves rectification efficiency of 59.6 % at an input power of 18.5 dBm (0.07W) that is the top performance in 30 GHz band.