Broadband SPST Switches in 250-nm GaN HEMT Process

Two SPST broadband switches are reported in this paper. The proposed switches are designed using the travelling-wave topology and implemented in the 250-nm GaN HEMT process. The L- to C-band switch covers a 1-dB bandwidth from 0.9-4.2 GHz with a minimum 0.52-dB insertion loss and a minimum 20.2-dB isolation at all measured frequencies, and the S-to Q-band switch covers a 2.7-36.3 GHz 1-dB bandwidth with a 0.64-dB minimum insertion loss and minimum 20-dB insertion loss above 12 GHz. The 0.1-dB compression points of the two
$\mathbf{sw}$
itches are higher than 17.3 dBm and 7.2 dBm, respectively.