Ultra High Power X-Band Amplifier Utilizing non-Uniform Comb Lines for Stabilization

This paper presents an X-band GaN amplifiers that achieves an output power of 58.3 dBm, power added efficiency of 44%, and associated gain of 13.6 dB. The amplifier utilizes nonuniform comb lines to suppress parasitic oscillations. The proposed technique achieved the highest output power in the 9.5 GHz band and the highest gain in the high power X-band, among single stage amplifiers without oscillation.