A pHEMT Switch Based Dual-band Switchable LNA for 5G millimeter-wave applications

This paper presents the design, analyze and implementation of a dual-band switchable low-noise amplifier (LNA). The LNA adopts a four-stage common source topology. The inter-stage matching circuit between the third and fourth stages employs a pHEMT switch to change the operation frequency without consuming extra dc power or increasing chip area. The proposed LNA is fabricated in a 0.1$-\mu$m GaAs process. The lower operation band covers a 3-dB bandwidth from 25 to 29 GHz with a maximum gain of 26.7 dB, which is designed for 5G FR2 frequency band n257 and n258. The higher operation band covers a 3-dB bandwidth from 35 to 41 GHz with a maximum gain of 24.6 dB, which is designed for 5GFR2 frequency band n260. The noise Figure (NF) in both bands is lower than 3.2 dB. The LNA consumes an S2-mW power and occupies a chip area of 1.6 mm
²
. The proposed switchable LNA is suitable for the 5G communication applications.