A Novel In-plane-sensitive Double-Hall Device

This paper reports the investigation of new double-Hall silicon device. It contains a semiconductor wafer with n-type dopant donor conductivity. On the one side of the chip five rectangular ohmic contacts spaced from each other are formed in succession - first, second, third, fourth and fifth electrode. This Hall sensor contain also three op-amps and two differential outputs. The high magnetosensitivity and metrological accuracy of the new microsystem is due to the summation of the output signals with the help of amplifiers. High signal-to-noise ratio has been achieved as a result from: the essential sensitivity and the reduction of the internal 1/f noise. Moreover, the availability of two outputs, apart from increasing twofold the Hall voltage, expand the functional device capabilities for industrial applications.