Implementation of Nearest Level Control Technique for Symmetric and Asymmetric TCHB inverter

One novel topology recently made its way into the literature is the transistor-clamped H-bridge (TCHB) inverter. In this paper, the symmetrical and asymmetrical TCHB inverters are looked at in-depth using the Nearest Level Control (NLC) Technique. The NLC technique is implemented as it operates at the fundamental switching frequency. Since this configuration can generate a half voltage in each switching operation, the number of switches, insulated gate driver circuits, and isolated dc input can be minimized. Analyses are conducted utilizing the same values of modulation strategy, resistor load, modulation amplitude, carrier frequency, and reference frequency. The study's validity is demonstrated by extensive simulation and experimental results covering a wide range of modulation indexes. The result shows that the implementation of the NLC technique is easier in both types. The voltage and current THD of the TCHB inverter is low at the modulation index of M=1.044.