3-Stage LNA For High Gain L1 Band Applications Using 180nm CMOS Technology

A good low noise amplifier in the front-end is the major requirement in designing a GPS receiver. An LNA must have gain that is high enough, better input-output matching, and low Noise Figure (NF). The proposed LNA is designed at 180 nm technology for low-power GPS applications in L1 band (1.57 GHz). In this paper, the proposed LNA achieves a high gain of 23.89 dB, good reverse isolation of −41 dB (S12), and a noise figure that is as low as 1.77 dB. The proposed LNA uses a source degeneration topology. The inductors with the same quality factor ‘Q’ are used in the proposed circuit to model the losses and achieve better gain and Noise Figure. The voltage supply in the LNA is 1.2V which is enough for GPS applications. The power consumption of LNA is only 6.543mW. The proposed design is stable with a stability factor greater than 3. The circuit design and analysis is done on an Advanced Design System (ADS) using 180 nm technology file.