Optimization of inverted ridge structure in GAN - based heterojunction laser

The double heterojunction laser has the characteristics of low cost and high gain, which is suitable for use in various laser sources requiring miniaturisation. Among them, the ridge structure is one of the most straightforward schemes to improve optical performance. However, because the ridge structure etches part of the electrode, there is a tradeoff parameter in the design of the laser, that is, the tradeoff between optical and electrical properties. Therefore, we used Silvaco TCAD device simulation software to optimise the ridge structure's design further, focusing on various geometric and material parameters of the ridge structure, and finally came to an optimal solution. To highlight the optimisation ideas and provide guidance for a broader range of research directions, we did not consider overly detailed technological processes in all our work. Finally, the results show that the inverted ridge structure can effectively improve the electrical characteristics.