New Ge-gate IR Phototransistor based on Doping Engineering Aspect: Photodetection Properties and Circuit Level Investigation

In this paper, a novel Infrared phototransistor (IR PT) design based on Ge-gate with doping engineering aspect (DE) is proposed. Comprehensive investigation based on accurate numerical modeling of the device photodetection properties is carried out. The impact of gate doping engineering on the Ge-gate IR PT FoM metrics is performed and thoroughly discussed. It is revealed that the proposed PT structure can provide enhanced photoresponse with low dark noise effects. Moreover, a systematic circuit level investigation of an optical logic switch based on the proposed Ge-gate IR PT with GE aspect is performed. The obtained results emphasize the ability of the proposed PT structure for promoting enhanced optical gain with superior switching capabilities. Promoting enhanced photoresponse, low noise and improved switching capabilities, this innovative strategy of GE can be used for the design of efficient CMOS-compatible optical communication systems.