1/f Noise Characterizing Method of MOSFET Devices and Processes by the Power Spectral Density Integrated Method

Using a unique characterization method that integrates the power spectral density (PSD) over a given frequency band, we examined the 1/f noise dependence of MOSFET devices and processes. As a result, we were able to identify a slight dependence and a Lorentzian noise that was difficult to determine from the shape of the PSD graph. This new method of quantitatively capturing the differences in stochastic phenomena was shown to be effective in device and process development.