Design of 1-7 GHz High Gain Wideband Filter LNA for Wireless Applications

The paper proposes a 3-stage wideband LNA based on 3
^rd
order Chebyshev band pass filter with cascode MOS configuration and an output matching stage. MOS1 along with source degeneration inductor provides narrowband impedance matching and MOS2 in cascode provides isolation of gate-to-drain capacitance with the input section in the feedback path. The input impedance of the cascode amplifier is incorporated as part of the filter. Band pass filter provides wide bandwidth operation with flat gain over the frequency of interest. The proposed LNA circuit is implemented in 90 nm MOS PTM node. The circuit furnishes a gain of 17.95 dB with a minimum noise figure of 1.115 dB and a good reverse isolation of −22.8 dB over a frequency range of 1–7 GHz.